SUU50N03-07 vishay siliconix document number: 71295 s-01707?rev. a, 07-aug-00 www.vishay.com 1 n-channel 30-v (d-s) 175 c mosfet product summary v ds (v) r ds(on) ( ) i d (a) a, b 0.007 @ v gs = 10 v 25 30 0.010 @ v gs = 4.5 v 18 d g s n-channel mosfet order number: SUU50N03-07 to-251 s gd top view and drain-tab absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 gate-source voltage v gs 20 v t a = 25 c 25 continuous drain current (t j = 175 c) a, b t a = 100 c i d 18 pulsed drain current i dm 100 a continuous source current (diode conduction) a, b i s 25 t c = 25 c 88 maximum power dissipation t a = 25 c p d 8.3 a, b w operating junction and storage temperature range t j , t stg ?55 to 175 c thermal resistance ratings parameter symbol typical maximum unit t 10 sec 15 18 junction-to-ambient a steady state r thja 40 50 c/w junction-to-case r thjc 1.4 1.7 c/w notes a. surface mounted on 1? x1? fr4 board. b. t 10 sec.
SUU50N03-07 vishay siliconix www.vishay.com 2 document number: 71295 s-01707 ? rev. a, 07-aug-00 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 2.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 30 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 50 a v gs = 10 v, i d = 20 a 0.007 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 20 a, t j = 125 c 0.011 ds(on) v gs = 4.5 v, i d = 20 a 0.010 forward transconductance b g fs v ds = 15 v, i d = 20 a 20 s dynamic a input capacitance c iss 3720 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 715 pf reverse transfer capacitance c rss 370 total gate charge c q g 60 120 gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 50 a 12 nc gate-drain charge c q gd ds gs d 10 turn-on delay time c t d(on) 11 25 rise time c t r v dd = 15 v, r l = 0.3 6 15 turn-off delay time c t d(off) v dd = 15 v, r l = 0.3 i d 50 a, v gen = 10 v, r g = 2.5 50 100 ns fall time c t f 11 20 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 100 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 45 100 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature.
SUU50N03-07 vishay siliconix document number: 71295 s-01707 ? rev. a, 07-aug-00 www.vishay.com 3 typical characteristics (25 c unless noted) 0 1000 2000 3000 4000 5000 0 6 12 18 24 30 0 2 4 6 8 10 0 1224364860 0.000 0.005 0.010 0.015 0.020 0 20406080100 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 50 100 150 200 250 0246810 0 20 40 60 80 100 120 0 1020304050 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs ? 55 c 5 v t c = 125 c v ds = 15 v i d = 50 a v gs = 10 thru 6 v v gs = 10 v v gs = 4.5 v c rss t c = ? 55 c 25 c 125 c 3 v c oss c iss i d ? drain current (a) 25 c 4 v 2 v
SUU50N03-07 vishay siliconix www.vishay.com 4 document number: 71295 s-01707 ? rev. a, 07-aug-00 typical characteristics (25 c unless noted) 0.0 0.4 0.8 1.2 1.6 2.0 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage (normalized) ? on-resistance ( t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) r ds(on) ) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c 0 thermal ratings 0 6 12 18 24 30 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 10 0.01 0.1 1 10 100 limited by r ds(on) 1 1000 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 100 normalized effective transient thermal impedance maximum avalanche drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 600 0.1 100 t a = 25 c single pulse 1 ms 10 ms 100 ms 100 s, dc 100 s 10 s 1 s 10 s 10 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5
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